Le-O1J15-09

Isolated Gate Driver for MOSFET / IGBT

• Vcc supply voltage between 10.5 and 13.5 V

• Input signal isolated by optocoupler

• Nominal input current 2 mA.

• Operation up to 600 kHz

• Suitable for controlling large Mosfets / IGBTs.

• Up to 9A peak

• Compatible with silicon carbide MOSFETs and GaN MOSFETs

• Output signal + 15V / -5V

• Vertical mounting to reduce space

• Supports pulses with PWM modulation. Duty cycle between 0 and 100%

• Non-inverting amplifier

• 4000V insulation voltage

• 100 ns propagation time

• 25 ns up and down flanks

• 45 mm x 30 mm x 17 mm.