Le-T1P12-08

Gate pulse amplifier with pulse transformer

• Vcc supply voltage between 12 and 18 V

• High level input signal: between 2.5 V and Vcc

• Low level input signal: less than 1.3 V

• Optimum operation between 15 kHz and 200 kHz

• Suitable for controlling large Mosfets / IGBTs

• Peak current up to 8A

• Active Miller Clamp

• Compatible with Silicon Carbide Mosfets (SiC Mosfets)

• Vertical mounting to reduce space

• Supports pulses with PWM modulation. Duty cycle between 0 and 65%

• Non-inverting amplifier

• 1000V insulation voltage.

• 45mm x 32mm x 25mm